Numerical Simulation and Process of Back-side Ultrafast Pulse Laser Grooving for SiC Wafers

HUANG Xiaolong; HU Xirui; FAN Xiaokang; ZHANG Chen

doi:10.3969/j.issn.1674-6457.2026.07.022

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Journal of Netshape Forming Engineering ›› 2026, Vol. 18 ›› Issue (7) : 238-248. DOI: 10.3969/j.issn.1674-6457.2026.07.022

Fabrication and Processing of Refractory Metals and Hard Materials

Numerical Simulation and Process of Back-side Ultrafast Pulse Laser Grooving for SiC Wafers

HUANG Xiaolong¹, HU Xirui², FAN Xiaokang², ZHANG Chen^1,*

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Abstract

The work aims to explore the influence of laser power parameters on the grooving morphology to achieve precise control of groove morphology. Based on the coupling of the two-temperature model and the dynamic mesh technique, a three-dimensional thermodynamics model for picosecond pulse laser grooving of Cu/Ni metal layers was established. A systematic process parameter investigation was conducted to analyze the influence of laser power, scanning speed, and repetition rate on the temperature field distribution, residual stress state, and groove morphology. Experimental results demonstrated that laser power significantly modulated both groove width and depth. Under identical process parameters, the Cu layer exhibited larger groove depth and width compared with the Ni layer, along with lower residual stress levels. Scanning speed notably affected groove depth and formation quality due to variations in pulse overlap and irradiation count. At lower speeds, repeated laser ablation at the same location led to a gradual increase in groove depth over time, whereas at speeds above 600 mm/s, the depth profile stabilized, and forming consistency improved significantly. Moreover, at repetition rates below 100 kHz, obvious discontinuous regions appeared in the groove, while at frequencies above 100 kHz, the depth curve became smooth with negligible fluctuations, resulting in uniform and stable formation quality. In conclusion, this study clarifies the influence mechanisms of key laser parameters on back-side metal laser grooving quality through simulation and experimentation, providing a theoretical foundation and technical support for high-precision and highly reliable wafer grooving processing techniques.

Key words

laser grooving / two-temperature model / picosecond laser / numerical simulation / morphological control

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HUANG Xiaolong, HU Xirui, FAN Xiaokang, ZHANG Chen. Numerical Simulation and Process of Back-side Ultrafast Pulse Laser Grooving for SiC Wafers[J]. Journal of Netshape Forming Engineering. 2026, 18(7): 238-248 https://doi.org/10.3969/j.issn.1674-6457.2026.07.022

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