目的 针对非法向喷墨打印中纳米银导线线宽精度与电性能难以协同控制的难题,提出工艺参数调控策略,旨在减小纳米银导线线宽并降低其电阻。方法 以非法向喷墨打印的纳米银导线线宽及电阻为研究对象,构建基于响应面法（Response Surface Methodology, RSM）试验设计与非支配排序遗传算法（Non-dominated Sorting Genetic Algorithm Ⅱ, NSGA-Ⅱ）的多目标优化模型。通过Box-Behnken试验设计,系统研究基板温度、打印速度及打印层数等关键参数对导线线宽和电阻的非线性影响机制,建立二阶多项式回归模型以表征参数-性能映射关系,并采用NSGA-Ⅱ算法进行Pareto前沿解集搜索,实现线宽与电阻的双目标协同优化。结果 NSGA-Ⅱ算法优化得到的最优工艺参数组合如下：基板温度为120 ℃,打印层数为5,打印速度为6.25 mm/s,在该条件下,纳米银导线的预测结果为线宽99.439 μm、电阻15.754 Ω,试验结果为线宽97.403 μm、电阻13.6 Ω。偏差分别为2.04%和7.32%,均小于10%。此外,通过对比优化组与经验组在不同倾斜角度基板上的打印结果可知,优化组在导线线宽（减小率2.26%~14.66%）与电阻（降低率0.8%~20.45%）方面均显著优于经验组,且导线的表面形貌更加均匀。结论 基于RSM-NSGA Ⅱ的优化模型有效实现了非法向喷墨打印场景下纳米银导线几何精度与电学性能的多目标优化,为复杂曲面电路板的高精度成形提供了理论支撑。
Abstract
To address the challenge of simultaneously optimizing the line width precision and electrical performance of nano-silver lines in non-vertical inkjet printing, the work aims to propose a process parameter control strategy, to reduce the line width and lower the resistance of nano-silver lines. With the line width and resistance of nano-silver lines in non-vertical inkjet printing as the research object, a multi-objective optimization model based on Response Surface Methodology (RSM) and the Non-dominated Sorting Genetic Algorithm II (NSGA-II) was constructed. Through Box-Behnken experimental design, the nonlinear effect mechanisms of key parameters such as substrate temperature, printing speed, and printing layers on the line width and resistance were systematically investigated. A second-order polynomial regression model was established to characterize the parameter-performance mapping relationship, and the NSGA-II algorithm was employed to search for the Pareto optimal solution set, achieving dual-objective optimization of line width and resistance. The optimal process parameter combination obtained by NSGA-II algorithm optimization was as follows: a substrate temperature of 120 ℃, 5 printing layers, and a printing speed of 6.25 mm/s. Under these conditions, the predicted results for the nano-silver lines were a line width of 99.439 μm and a resistance of 15.754 Ω. Experimental validation results showed a line width of 97.403 μm and a resistance of 13.6 Ω, with deviations of 2.04% and 7.32%, respectively, both below 10%. Furthermore, by comparing the optimized group with the empirical group on substrates with different inclination angles, the optimized group exhibited significantly better performance in line width (reduction rate of 2.26%-14.66%) and resistance (reduction rate of 0.8%-20.45%), along with more uniform surface morphology. The optimized model based on RSM-NSGA II effectively achieves multi-objective optimization of electrical performance and geometric precision of nano-silver lines in non-vertical inkjet printing, providing theoretical support for the high-precision forming of complex curved organic substrates.
关键词
喷墨打印 /
纳米银导线 /
响应面法 /
多目标优化 /
工艺参数优化
Key words
inkjet printing /
nano-silver lines /
response surface methodology /
multi-objective optimization /
process parameter optimization
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基金
国家重点研发计划（2022YFB4602800）; 西安市科技计划重点产业链关键核心技术攻关项目（23LLRH0079）
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