目的 选择NiCr作为应变传感器的敏感层,探究磁控溅射NiCr薄膜过程中,溅射功率、氩气流量、基底温度对薄膜质量的影响规律,获得最佳的制备工艺参数。方法 选用纯度≥99.99%的3英寸（1英寸= 2.54 cm）NiCr靶材,采用直流溅射的方式在硅片基底上沉积薄膜,溅射室本底真空度为5×10-5 Pa,氩气工作气压为1.2 Pa,自转转速为5 r/min,偏压为20 V,采用离子源（工作气压0.8 Pa,电流2 A）对硅基样品清洗5 min,基片自转转速为5 r/min,溅射时间为30 min。利用原子力显微镜和微电阻计测量薄膜的厚度、粗糙度和电阻率。结果 在溅射功率由40 W增加到200 W过程中,平均粗糙度增加了7.99 nm,平均膜厚增加了258.92 nm,电阻率减小了7×10-10 Ω·m。在氩气流量由20 mL/min增加到60 mL/min过程中,平均粗糙度减小了1.7 nm,平均膜厚增加了76 nm,电阻率减小了2×10-10 Ω·m。在基底温度由25 ℃增加到200 ℃过程中,平均粗糙度减小了5.09 nm,平均膜厚增加了7.71 nm,电阻率减小了5×10-10 Ω·m。结论 功率升高显著提高了沉积速率并降低了电阻率,但会引起表面粗糙度增加;随着氩气流量增加,薄膜厚度也有所增加,粗糙度和电阻率均略有降低;基底温度升高显著降低了粗糙度和电阻率,而对膜厚的影响不大。通过调整3种工艺参数,制备出表面平整、电阻率低的NiCr薄膜,为后续提高传感器性能提供了实验依据。
Abstract
The work aims to select NiCr as the sensitive layer of a strain sensor and investigate the effects of sputtering power, argon flow rate, and substrate temperature on the quality of NiCr thin films prepared by magnetron sputtering, so as to determine the optimal deposition parameters. A 3-inch NiCr target with a purity of ≥99.99% was used, and NiCr thin films were deposited on silicon substrates by DC magnetron sputtering. The base pressure of the sputtering chamber was set to 5×10-5 Pa, the working argon pressure was 1.2 Pa, the substrate rotation speed was 5 r/min, and the substrate bias was 20 V. Prior to deposition, the substrates were cleaned with an ion source (working pressure 0.8 Pa, current 2 A) for 5 min at 5 r/min. The sputtering time was fixed at 30 min. Film thickness, surface roughness, and resistivity were characterized with atomic force microscopy (AFM) and a micro-resistivity meter. As the sputtering power increased from 40 W to 200 W, the average roughness increased by 7.99 nm, the average film thickness increased by 258.92 nm, and the resistivity decreased by 7×10-10 Ω·m. When the argon flow rate increased from 20 mL/min to 60 mL/min, the average roughness decreased by 1.7 nm, the average film thickness increased by 76 nm, and the resistivity decreased by 2×10-10 Ω·m. As the substrate temperature rose from 25 ℃ to 200 ℃, the average roughness decreased by 5.09 nm, the average film thickness increased by 7.71 nm, and the resistivity decreased by 2×10-10 Ω·m. Increasing the power significantly enhances the deposition rate and reduces the resistivity, but leads to an increase in surface roughness. As the argon gas flow rate increases, the film thickness also increases, while both roughness and resistivity decrease slightly. Raising the substrate temperature significantly reduces both roughness and resistivity, with little effect on film thickness. By optimizing these three process parameters, a smooth NiCr film with low resistivity is successfully prepared, providing an experimental basis for further improving sensor performance.
关键词
NiCr薄膜 /
磁控溅射 /
工艺参数 /
表面质量 /
电阻率
Key words
NiCr thin film /
magnetron sputtering /
process parameters /
surface quality /
resistivity
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基金
国家重点研发计划（2022YFB4701000）
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