殷光茂,韩俊青,杨祥魁,等.附载体极薄铜箔的剥离机制[J].精密成形工程,2024,16(8):11-18.
YIN Guangmao,HAN Junqing,YANG Xiangkui,et al.Stripping Mechanism of Ultra-thin Copper Foil with Carrier[J].Journal of Netshape Forming Engineering,2024,16(8):11-18. |
| 附载体极薄铜箔的剥离机制 |
| Stripping Mechanism of Ultra-thin Copper Foil with Carrier |
| 投稿时间：2024-04-24 |
| DOI：10.3969/j.issn.1674-6457.2024.08.002 |
| 中文关键词: 极薄铜箔 剥离层 界面 载体铜箔 剥离强度 |
| 英文关键词: ultra-thin copper foil stripping layer interface carrier copper foil stripping strength |
| 基金项目:国家重点研发计划(2021YFB3400800);山东省泰山学者青年计划 |
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| 中文摘要: |
| 目的 研究一种极薄铜箔制备过程中所需要的新型剥离层结构，以此来实现极薄铜箔的顺利剥离。方法 利用两步电沉积法制备了可剥离的极薄铜箔，利用EBSD分析了“载体铜箔-剥离层-极薄铜箔”结构的附载体铜箔截面晶粒分布规律，利用聚焦离子束技术(FIB)制备了TEM样品，通过HRTEM对“载体铜箔-剥离层-极薄铜箔”结构中剥离层/极薄铜箔、剥离层/载体铜箔的界面微观结构进行了研究。结果 与单一Ni剥离层相比，通过两步电沉积法制备的复合剥离层(Ni，Cr-O)具有更好的可剥离性，复合剥离层由有序Ni层和无序Cr-O层组成。复合剥离层中的Ni层与载体铜箔相结合，界面完全共格，形成较强的界面结合;复合剥离层中的无序Cr-O层与极薄铜箔相结合，Cr-O层与极薄铜箔界面原子紊乱，形成较弱的界面结合。对制备的极薄铜箔剥离强度进行测试可知，极薄铜箔与载体铜箔能够剥离，极薄铜箔与剥离层之间的剥离强度约为0.01 N/mm。结论 利用载体铜箔-剥离层、极薄铜箔-剥离层结合界面的差异化实现了界面结合的差异化，复合剥离层内有序和无序的结构分布调控了载体铜箔与剥离层、极薄铜箔与剥离层之间的界面结合，使剥离层与极薄铜箔之间的结合弱于剥离层与载体铜箔之间的结合，有助于极薄铜箔与剥离层分离，同时剥离层与载体铜箔之间不会分离，进而获得可洁净剥离的极薄铜箔。 |
| 英文摘要: |
| The work aims to develop a new stripping layer structure required in the preparation of ultra-thin copper foil to realize the smooth stripping of ultra-thin copper foil. The strippable ultra-thin copper foil was prepared by two-step electrodeposition method. The grain distribution of the copper foil with carrier in the structure of "carrier foil-stripping layer-ultra-thin coil foil" was analyzed by EBSD, and TEM samples were prepared by focusing ion beam technique (FIB). The microstructure of the interface between stripping layer/ultra-thin copper foil and stripping layer/carrier copper foil in the structure of "carrier foil-stripping layer-ultra-thin coil foil" was studied by HRTEM. The composite stripping layer (Ni, Cr-O) prepared by two-step electrodeposition had better stripping property than the single Ni stripping layer. The composite stripping layer consisted of ordered Ni layer and disordered Cr-O layer. The Ni layer in the composite stripping layer was combined with the carrier copper foil, and the interface was completely coherent, forming a strong interface metallurgical bonding. The disordered Cr-O layer in the composite stripping layer was combined with the ultra-thin copper foil, and the interfacial atoms of Cr-O layer and ultra-thin copper foil were disordered, forming a weak interface bonding. The stripping strength of the ultra-thin copper foil prepared was tested. The stripping strength between the ultra-thin copper foil and the carrier copper foil could not be separated, and the stripping strength between the ultra-thin copper foil and the stripping layer was 0.01 N/mm. The difference of interface bonding was realized by the difference of carrier foil-stripping layer and ultra-thin copper foil-stripping layer bonding interface. The ordered and disordered structure distribution in the composite stripping layer regulates the interface bonding between carrier copper foil and stripping layer, and between ultra-thin copper foil and stripping layer, so that the bonding between stripping layer and ultra-thin copper foil is less than that between stripping layer and carrier copper foil. It is helpful to separate the ultra-thin copper foil from the stripping layer, and the stripping layer and the carrier copper foil will not be separated at the same time, thus the ultra-thin copper foil that can be cleanly stripped is obtained. |
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