曹福洋,于雷,侯立国,等.喷射成形铝硅合金电子封装梯度材料的研究进展[J].精密成形工程,2015,7(3):27-32,42.
CAO Fu-yang,YU Lei,HOU Li-guo,et al.Research Progress in Aluminum Silicon Gradient Materials for Electronic Packaging Prepared by Spray Forming[J].Journal of Netshape Forming Engineering,2015,7(3):27-32,42. |
| 喷射成形铝硅合金电子封装梯度材料的研究进展 |
| Research Progress in Aluminum Silicon Gradient Materials for Electronic Packaging Prepared by Spray Forming |
| 投稿时间：2015-03-15 修订日期：2015-05-10 |
| DOI：10.3969/j.issn.1674-6457.2015.03.005 |
| 中文关键词: 高硅铝合金 喷射成形 梯度材料 电子封装 |
| 英文关键词: high-silicon Al-Si alloy spray forming gradient material electronic packaging |
| 基金项目:国家自然科学基金(51375110) |
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| 中文摘要: |
| 高硅铝合金电子封装材料以其良好的热物理性能与力学性能,越来越受到材料和电子封装行业研究者的重视,但是其焊接性能与机械性能不理想。铝硅合金梯度板材可解决电子封装材料低膨胀与高机械性能的矛盾,其高硅端热膨胀系数低,导热好,适于裸集成电路;低硅端机械性能高,可焊接,便于精加工和封装,是未来武器装备高集成电路封装构件重要的备选材料。针对这类材料的制备问题,提出了双金属一步式喷射成形技术的概念,并对喷射工艺参数进行了初步的探索研究。2 个沉积器的间距可以影响复合板材的外形轮廓与内部硅成分的梯度分布,模拟结果显示间距大于等于40 mm 时,出现台阶而且成分变化有突变。 |
| 英文摘要: |
| The high-silicon Al-Si alloy functional gradient plate has attracted more and more attention from the researchers in the fields of materials and electronic packaging industries due to its good thermo-physical and mechanical properties, however, its welding properties are not satisfying. Its properties of low expansion and high thermal conductivity in the side of high Si are suitable for printing the integrated circuit and good properties of the mechanical and weldability in the other side are suitable for packaging the integrated circuit, can solve the contradiction between low expasion and high mechanical properties in the electronic packaging materials and is an important optional material for the packaging components of integrated circuit in future weapons. To solve the problems in preparing this kind of functional gradient materials, this study put forward the concept of double-metal one-step spray forming technology and presented the preliminary investigation on the parameters of spray forming technology. The outline of composite board and gradient distribution of the internal composition of silicon were influenced by the distance between the two atomizers, and the simulation result indicated that a stair appeared and the component had a violent change when the distance was no less than 40 mm. |
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